leshan radio company, ltd. s-l2sk3018wt1g sc-70 n - channel device marking shipping ordering information l2sk3018wt1g kn 3000 tape & reel m kn kn = device code m = month code marking diagram & pin assignment 3 2 1
l2sk3018wt3g kn 1 0000 tape & reel maximum ratings ? we declare that the material of product compliance with rohs requirements. silicon n-channel mosfet 100 ma, 30 v f eatu r es 1) low on-resist ance. 2) f a st sw itching speed. 3 ) l o w v o ltag e dr ive ( 2 .5v ) m a ke s t h is d e v i ce i dea l f o r portable equipment. 4) easily designed drive circuit s . 5) easy to p a rallel. ? parameter drain-source voltage gate-source voltage drain current total power dissipation (tc=25 c) channel temperature storage temperature v dss v gss p d ? 2 tch 30 v v ma mw c 20 100 i d i dp ? 1 continuous pulsed ma 400 200 150 tstg c ? 55 to + 150 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 with each pin mounted on the recommended lands. drain source gate ? gate protection diode ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use a protection circuit when the fixed voltages are exceeded. 1 3 2 rev .a 1/5 ? esd>500v l2sk3018wt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-l2sk3018wt1g s-l2sk3018wt3g
leshan radio company, ltd. l2sk3018wt1g , s-l2sk3018wt1g electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss |y fs | c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1 1.5 8 ? 71 3 ? ? ? ? av gs = 20v, v ds = 0v i d = 10 a, v gs = 0v v ds = 30v, v gs = 0v v ds = 3v, i d = 100 a i d = 10ma, v gs = 4v i d = 1ma, v gs = 2.5v v ds = 5v v ds = 3v, i d = 10ma v gs = 0v f = 1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d = 10ma, v dd 5v ns t r ? 35 ? v gs = 5v ns t d(off) ? 80 ? r l = 500 ? ns t r ? 80 ? r g = 10 ? ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance rev .a 2/5
leshan radio company, ltd. typical electrical characteristics 0 1 23 45 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs =1.5v 4v 2v ta=25 c pulsed fig.1 typical output characteristics 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 c 75 c 25 c ? 25 c v ds =3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) (v) channel temperature : tch ( c ) 0.5 ? 25 25 50 75 100 125 150 fig.3 gate threshold voltage vs. channel temperature v ds =3v i d =0.1ma pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds (on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =2.5v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =0.1a static drain-source on-state resistance : r ds (on) ( ? ) ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 2 5 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds (on) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 fig.7 static drain-source on-state resistance vs. channel temperature v gs =4v pulsed i d =100ma i d =50ma 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta= ? 25 c 25 c 75 c 125 c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( ) rev .a 3/5 l2sk3018wt1g , s-l2sk3018wt1g
leshan radio company, ltd. 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 1 0 2 0 5 0 5 10 20 fig.11 typical capacitance vs. drain-source voltage c iss c oss c rss ta =25 c f=1mh z v gs =0v 0.1 10 20 500 switching time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 1 0 2 0 5 0 50 100 200 1000 2 100 fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) ta =25 c v dd =5v v gs =5v r g =10 ? pulsed t d(off) t r t d(on) t f z sw itch in g ch aracteristics measu remen t circu i t fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching time waveforms rev .a 4/5 l2sk3018wt1g , s-l2sk3018wt1g
leshan radio company, ltd. sc?70 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev .a 5/5 l2sk3018wt1g , s-l2sk3018wt1g
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